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| NTE6409 Unijunction Transistor Description: The NTE6409 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. Features: D Low Peak Point Current: 2A Max D Low Emitter Reverse Current: 200nA Max D Passivated Surface for Reliability & Uniformity Absolute Maximum Ratings: (TA = +25C, unless otherwise specified) Power Dissipation (Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW RMS Emitter Current, IE(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Peak Pulse Emitter Current (Note 2), iE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Emitter Reverse Voltage, VB2E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Interbase Voltage, VB2B1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Note 1. Derate 3mW/C increase in ambient temperature. The total power dissipation (available power to Emitter and Base-Two) must be limited by the external circuitry. Note 2. Capacitor discharge: 10F or less, 30V or less Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Intrinsic Standoff Ratio Interbase Resistance Interbase Resistance Temperature Coefficient Emitter Saturation Voltage Symbol rBB rBB Test Conditions VB2B1 = 10V, Note 3 VB2B1 = 3V, IE = 0 VB2B1 = 3V, IE = 0, TA = -55 to +125C Min 0.68 4.7 0.1 - - - - 8 6 Typ - 7.0 - 3.5 15 0.005 1 10 7 Max 0.82 9.1 0.9 - - 0.2 2 18 - k %/C V mA A A mA V Unit VEB1(sat) VB2B1 = 10V, IE = 50mA, Note 4 IEB2O IP IV VOB1 VB2E = 30V, IB1 = 0 VB2B1 = 25V VB2B1 = 20V, RB2 = 100, Note 4 Modulated Interbase Current IB2(mod) VB2B1 = 10V, IE = 50mA Emitter Reverse Current Peak Point Emitter Current Valley Point Current Base-One Peak Pulse Voltage Note 3. Intrinsic Standoff Ratio, , is defined by the equation: V - VF = P VB2B1 Where: VP = Peak Point Emitter Voltage VB2B1 = Interbase Voltage VF = Emitter to Base-One Junction Diode Drop ([ 0.45V @ 10A) Note 4. Use pulse techniques: PW [ 300s, Duty Cycle 2% to avoid internal heating due to interbase modulation which may result in erroneous readings. .230 (5.84) Dia Max .195 (4.95) Dia Max .210 (5.33) Max .030 (.762) Max .500 (12.7) Min .018 (0.45) Base 1 Emitter 45 Base 2/Case .041 (1.05) |
Price & Availability of NTE6409
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